The ECPR Method

The use of the ECPR method for the production of micro and nanoscale metal patterns makes it possible to achieve improved accuracy and significant cost and time savings compared to conventional methods. ECPR is a nanoscale electrochemical deposition technique utilizing a reusable master electrode as a template to fabricate metal patterns in one single replication step. By combining pattern definition and metal deposition in one step ECPR eliminates the need for traditional photolithography and plating. One single ECPR tool replaces 6 tools in a typical though mask plating process (coat, expose, develop, descum, electroplate and strip).


Process features

• Single step direct metallization with accurate electrochemical
  process control
• Room temperature process
• Low contact force eliminates substrate defects
• Uniform current density distribution enabling superior
  thickness uniformity
• Accurate CD-control

Technical capabilities

• Metallization on most substrates such as silicon wafers,
  ceramic substrates and flexible or rigid organic substrates
• Single/multi layer capabilities
• Line/space 5/5µm standard, 500nm/300nm demonstrated
• High deposition rates, up to 6µm/min demonstrated (Cu)
• High purity low resistivity metal enabled by unique chemistry

Competitive advantages with ECPR

• Lower investments
  - One single ECPR tool replaces 6 conventional tools
  - Less clean room area required

• Lower operational cost
  - Less direct material (No photopolymers or developers)
  - Less personnel
  - Less inspection (optional)

• Improved process control and high throughput
  - Short cycle times
  - Fast process feedback enables higher yield

• Less environmental impact
  - Lower total chemical consumption
  - No toxic photopolymers and developer
» Replicated results

SEM image of ECPR-deposited copper coil on Si/SiO2 substrate. High resolution replication is achieved with additive ECPR. The line width for the inductor is 10µm and copper thickness is 3µm.



The resolution test patterns seen to the left includes lines from 100µm down to 4µm and 6µm spaces. 2µm thick copper has been ECPR deposited onto a Si/SiO2 wafer.



Magnified image of the lower part of the resolution test pattern with 4µm lines and 6µm space.
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